Effects of helium dilution of TEOS-O2-C2F6 gas mixture on plasma-enhanced chemical vapor deposition of fluorine-doped silicon oxide film

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 17, Issue 2, 1999, Pages 425-432

  Yoshimaru, Masaki ^a   Koizumi, Satoshi ^a   Shimokawa, Kimiaki ^a   Mori, Y ^b   Fukuda, H ^b   Matsuki, N ^b  

^a OKI ELECTRIC INDUSTRY CO   (Japan)

^b ASM Japan Co Ltd   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0033441811     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.581603     Document Type: Article

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