Properties of fluorinated silicon oxide films formed using fluorotriethoxysilane for interlayer dielectrics in multilevel interconnections

Journal of the Electrochemical Society

Volumn 143, Issue 3, 1996, Pages 1084-1087

  Homma, Tetsuya ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; CURRENT DENSITY; DIELECTRIC DEVICES; ETCHING; FLUORINE COMPOUNDS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; REFRACTIVE INDEX; RESIDUAL STRESSES; SHRINKAGE; THIN FILMS; ULSI CIRCUITS;

FLUORINATED SILICON OXIDE; FLUORINE ATOMIC CONCENTRATION; FLUOROTRIETHOXYSILANE; FULL WIDTH AT HALF MAXIMUM; INTERLAYER DIELECTRICS; LOW PRESSURE CHEMICAL VAPOR DEPOSITION; MULTILEVEL INTERCONNECTIONS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0030109632     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1836587     Document Type: Article

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