Reduction mechanism in the dielectric constant of fluorine-doped silicon dioxide film

Journal of the Electrochemical Society

Volumn 144, Issue 7, 1997, Pages 2531-2537

  Lim, Sang Woo ^a   Shimogaki, Yukihiro ^a,b   Nakano, Yoshiaki ^a   Tada, Kunio ^a   Komiyama, Hiroshi ^a  

^a UNIVERSITY OF TOKYO   (Japan)

^b ELECTROCHEMICAL SOCIETY

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE MEASUREMENT; CHEMICAL BONDS; CHEMICAL VAPOR DEPOSITION; COMPOSITION EFFECTS; DOPING (ADDITIVES); FLUORINE; PERMITTIVITY; PLASMA APPLICATIONS; POLARIZATION; REDUCTION; SILICA; VOLTAGE MEASUREMENT;

ELECTRONIC POLARIZATION; IONIC POLARIZATION; ORIENTATIONAL POLARIZATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION (PECVD);

DIELECTRIC FILMS;

EID: 0031191858     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1837850     Document Type: Article

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