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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 2 SUPPL. B, 1996, Pages 1579-1582

Low dielectric constant fluorinated oxide films prepared by remote plasma chemical vapor deposition

(5) Lee, Seung Min a Park, Min b Park, Kyu Chang a Bark, Jong Tae b Jang, Jin a

a Kyung Hee University (South Korea)

b Electronics and Telecommunications Research Institute (ETRI) (South Korea)

Author keywords

Dielectric constant; RPCVD; SiF4; SiO2; SiOF; XPS

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ELECTRIC PROPERTIES; FILM PREPARATION; FLUORINE; MIXTURES; OXIDES; PERMITTIVITY; PLASMA APPLICATIONS; REFRACTIVE INDEX; SILICON COMPOUNDS; X RAY PHOTOELECTRON SPECTROSCOPY;

FLUORINATED OXIDE FILMS; GAS MIXTURES; REMOTE PLASMA CHEMICAL VAPOR DEPOSITION; SILICON OXIDE; STRETCHING MODE SHIFTS; WAVE NUMBER;

DIELECTRIC FILMS;

EID: 0030078812 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.35.1579 Document Type: Article

Times cited : (14)

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