Ab initio molecular orbital study of water absorption and hydrolysis of chemical vapor deposited SiOF films I

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 4 SUPPL. B, 1997, Pages 2533-2544

  Nakasaki, Yasushi ^a   Miyajima, Hideshi ^a   Katsumata, Ryota ^a   Hayasaka, Nobuo ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

ab initio molecular orbital method; Dielectric film; Doping; Fluorine; Hydrolysis; Low k; SiOF; Water absorption

Indexed keywords

MOLECULAR ORBITAL METHOD; NONBRIDGING OXYGENS (NBO);

ACTIVATION ENERGY; CHEMICAL BONDS; CHEMICAL VAPOR DEPOSITION; CRYSTAL STRUCTURE; DOPING (ADDITIVES); FLUORINE; HYDROLYSIS; OXYGEN; SILICON COMPOUNDS; WATER ABSORPTION;

DIELECTRIC FILMS;

EID: 0031123015     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.2533     Document Type: Article

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