Characterization of iodoheptafluoropropane as a dielectric etchant. I. Process performance evaluation

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 19, Issue 4, 2001, Pages 1269-1292

  Karecki, Simon ^a,d   Chatterjee, Ritwik ^a   Pruette, Laura ^a   Reif, Rafael ^a   Vartanian, Victor ^b   Sparks, Terry ^b   Beu, Laurie ^b   Novoselov, Konstantin ^c  

^a Massachusetts Institute of Technology Cambridge   (United States)

^b MOTOROLA INC   (United States)

^c SOFT TEC   (Russian Federation)

^d IBM RESEARCH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; DISSOCIATION; ENTHALPY; ETCHING; FLOW OF FLUIDS; HYDROGEN BONDS; IODINE; MASKS; OXIDES; PLASMAS; PRESSURE EFFECTS; QUANTUM THEORY;

INDUCTIVELY COUPLED HIGH DENSITY PLASMA; IODOHEPTAFLUOROPROPANE; OXIDE ETCH; PERFLUOROCOMPOUNDS;

FLUORINE CONTAINING POLYMERS;

EID: 0035535258     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1387088     Document Type: Conference Paper

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