Analyses of the chemical topography of silicon dioxide contact holes etched in a high density plasma source

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 15, Issue 3, 1997, Pages 629-639

  Joubert, O ^a   Czuprynski, P ^a   Bell, F H ^a,c   Berruyer, P ^b   Blanc, R ^b  

^a ORANGE LABS   (France)

^b CEA GRENOBLE   (France)

^c SIEMENS AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000257050     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.589305     Document Type: Article

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