Plasma etching of silicon dioxide and silicon nitride with non-perfluorocompound chemistries: trifluoroacetic anhydride and iodofluorocarbons

Materials Research Society Symposium - Proceedings

Volumn 447, Issue , 1997, Pages 67-74

  Karecki, Simon M ^a   Pruette, Laura C ^a   Rafael Reif, L ^a  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ELECTRONICS INDUSTRY; MAGNETIC FIELD EFFECTS; PLASMA APPLICATIONS; PLASMA ETCHING; PRESSURE EFFECTS; SEMICONDUCTING FILMS; SEMICONDUCTOR DEVICE MANUFACTURE; SILICA; SILICON NITRIDE;

IODOFLUOROCARBONS; OCTAFLUOROPROPANE; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; TRIFLUOROACETIC ANHYDRIDE;

FLUORINE COMPOUNDS;

EID: 0030720592     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)