New radical-control method for SiO2 etching with non-perfluorocompound gas chemistries

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 37, Issue 10 PART A, 1998, Pages

  Samukawa, Seiji ^a   Tsuda, Ken Ichiro ^a  

^a NEC CORPORATION   (Japan)

Author keywords

Fluorocarbon gas; Iodofluorocarbon gas; Perfluorocarbon gas; Radical injection; SiO2 etching; Ultrahigh frequency plasma

Indexed keywords

CATALYST SELECTIVITY; CHEMICAL BONDS; COMPOSITION; ELECTRON ENERGY LEVELS; ETCHING; FLUOROCARBONS; PLASMA APPLICATIONS;

FLUOROCARBON GAS; IODOFLUOROCARBON GAS; RADICAL DENSITY; ULTRAHIGH FREQUENCY PLASMA;

SILICA;

EID: 0032181772     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.l1095     Document Type: Article

References (8)

1. H. Kazumi and K. Tago: Jpn. J. Appl. Phys. 34 (1995) 2125.
2. C. Suzuki, Y. Kawai, K. Sasaki and K. Kadota: Proc. 3rd Conf. Reactive Plasmas (The Japan Society of Applied Physics, Nara, 1997) p. 437.
3. K. Miyata, H. Arai, T. Kuno, M. Hori and T. Goto: Proc. 3rd Conf. Reactive Plasmas (The Japan Society of Applied Physics, Nara, 1997) p. 63.
4. H. Itoh: J. Phys. D 24 (1991) 277.
5. S. Samukawa, Y. Nakagawa, T. Tsukada, H. Ueyama and K. Shinohara: Jpn. J. Appl. Phys. 34 (1995) 6805.
6. H. Akashi, S. Samukawa, N. Takahashi and T. Sasaki: Jpn. J. Appl. Phys. 36 (1997) L877.
7. S. Samukawa and T. Tsukada: Jpn. J. Appl. Phys. 35 (1997) 7647.
8. M. V. Malyshev, V. M. Donnelly and S. Samukawa: J. Appl. Phys. 84 (1998) 1222.