Vertical Profile Optimization of Very High Frequency Epitaxial Si- and SiGe-Base Bipolar Transistors

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 1993, Pages 83-86

  Crabbe E F ^a   Meyerson, B S ^a   Stork, J M C ^a   Harame, D L ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ECONOMIC AND SOCIAL EFFECTS; HETEROJUNCTION BIPOLAR TRANSISTORS; SI-GE ALLOYS; CHEMICAL VAPOR DEPOSITION; CMOS INTEGRATED CIRCUITS; EPITAXIAL GROWTH; HETEROJUNCTIONS; SEMICONDUCTOR DEVICE MANUFACTURE;

CYCLE PROCESS; EARLY VOLTAGE; EPITAXIAL BASE; EPITAXIAL SI; PHOSPHORUS-DOPED; PROFILE OPTIMIZATION; SIGE HBTS; TRADE OFF; VERTICAL PROFILE; VERY HIGH FREQUENCY;

CUTOFF FREQUENCY; BIPOLAR TRANSISTORS;

PHOSPHORUS DOPED EMITTERS; THERMAL CYCLE PROCESS; VERTICAL PROFILE;

EID: 0027889053     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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