Carbon doping of SiGe heterobipolar transistors

1998 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 1998

Volumn 1998-September, Issue , 1998, Pages 19-23

  Osten, H J ^a   Knoll, D ^a   Heinemann, B ^a   Tillack, B ^a  

^a IHP   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BORON; CARBON; MONOLITHIC INTEGRATED CIRCUITS;

BASE CURRENTS; CARBON DOPING; ENHANCED BORON DIFFUSION; HETEROBIPOLAR TRANSISTORS; MAXIMUM OSCILLATION FREQUENCY; OUT-DIFFUSION; PROCESSING STEPS; RING OSCILLATOR;

SI-GE ALLOYS;

EID: 84988915376     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SMIC.1998.750170     Document Type: Conference Paper

References (8)

1. E. Kasper, A. Gruhlc., H. Kibbel. "High speed SiGe-HBT with very low base sheet resistivity", IEDM Tech. Dig. pp.79-81, 1993.
2. E.J. Prinz, P.M. Garone, P.V. Schwartz, X. Xiao., J.C. Sturm, "The effect of base dopant outdiffusion and undoped Si,.,Ge, junction spacer layers on Si/Si,.,Ge,/Si heterojunction bipolar transistors", IEEE Electron Device Lett., vol. 12, no 2, pp. 42-44, 1991.
3. L.D. Lawarotti, J.C. Sturm, E. Stach, R. Hull, T. Buyuklimanli, and C. Magee, "Suppression of boron outdiffusion in SiGe HBTs by carbon incorporation", IEDM Tech. Dig., pp. 249-252, 1996.
4. H.J. Osten, G. Lippert, P. Gaworzewski, and R. Sorge, "Impact of low carbon concentrations on electrical properties of highly boron-doped SiGe layers",Appy. Plivs. Lett. vol. 71, pp. 1522-1524, 1997.
5. H. Riicker, B. Heinemann, W. Ropke, R. Kurps, D. Kriiger, G. Lippert, and H.J. Osten, "Suppressed diffusion of boron and carbon in carbon-rich silicon", AppL Phys. Letr. vol. 73, no. 12, pp. xxx-xxx, 1998.
6. B. Heinemann, D. Knoll, G. Fischer, D. Kriiger, G. Lippert, H.J. Osten, H. Riicker, W. Riipke, P. Schley, and B. Tillack: " Control of steep boron profiles in Si/SiGe heterojunction bipolar uansistors", Proc. 27th ESSDERC, pp.544-547, 1997.
7. T. Ghani, J.L. Hoyt, A.M. Mc Carthy, and J.F. Gibbons, "Control of implant-damage-enhanced boron diffusion in epitaxially grown n-Si/p-Si,.,Ge,/n-Si heterojunction bipolar transistors", J. Ekctron. Marerials, vol. 24, no. 2, pp. 999-1005, 1995.
8. D. Knoll, B. Heinemann, K.E. Ehwald, P. Schley, W. Ropke, D. Bolze, J. Schlote, F. Henel, and G. Fischer, "Comparison of P in situ spike doped with As implanted poly silicon emitters conceming Si/SiGe/Si HBT applications", Proc. 25th ESSDERC, pp.627-630, 1995.