A highly manufacturable 0.35μm SiGe HBT technology with 70GHz fmax

European Solid-State Device Research Conference

Volumn , Issue , 1998, Pages 448-451

  Chantre, A ^a   Marty, M ^b   Regolini, J L ^a   Mouis, M ^a,d   De Pontcharra, J ^c   Dutartre, D ^a,b   Jouan, S ^a   Chaudier, F ^a,d   Assous, M ^a,d   Morin, C ^a   Roche, M ^b  

^a ORANGE LABS   (France)

^b 2SGS Thomson Microelectronics ^*  (France)

^c CEA LETI   (France)

^d INSTITUT DES NANOTECHNOLOGIES DE LYON   (France)

Author keywords

[No Author keywords available]

Indexed keywords

SILICON ALLOYS;

DYNAMIC CHARACTERISTICS; MANUFACTURABLE PROCESS; PEAK MAXIMA; PROCESS SIMPLICITY; SELF-ALIGNED; SIGE-HBT TECHNOLOGY;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 84908154349     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. K. Oda et al, IEDM-97 Tech. Dig., pp. 791-794 (1997).
2. A. Schiippen et al, IEDM-95 Tech. Dig., pp. 743-746 (1995).
3. IN. Burghartz et al, BCTM-93 Tech. Dig., pp. 55-62 (1993).
4. D. L. Harame et al, IEDM-94 Tech. Dig., pp. 437-440 (1994).
5. T. F. Meister et al, IEDM-95 Tech. Dig., pp. 739-742 (1995).