Low-frequency noise in SiGe P-channel MOSFETs designed for 0.13μm technology

European Solid-State Device Research Conference

Volumn , Issue , 1998, Pages 504-507

  Okhonin, S ^a   Georgescu, B ^a   Py, M A ^a   Fischer, H ^b   Risch, L ^b  

^a EPFL   (Switzerland)

^b SIEMENS AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

MOSFET DEVICES; SPURIOUS SIGNAL NOISE;

HOLE CONFINEMENT; LOW-FREQUENCY NOISE; M-TECHNOLOGIES; P CHANNELS; PHYSICAL SEPARATION; SI DEVICES; SIGE CHANNELS; SPECTRAL POWER DENSITY;

SILICON ALLOYS;

EID: 0002085420     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

1. D. K. Nayak, K.S. Woo, J. S. Park, K.-L. Wang, and K. P. MacWilliams, "Enhancement-Mode Quantum-Well GexSil-x PMOS", IEEE EDL, vol. 12, no. 4, 1991, pp. 154- 156.
2. S. Verdonct-Vanderbroek et al., "High-Mobility Modulation-Doped Graded SiGe- Channel p-MOSFETs", IEEE EDL, vol. 12" no. 8, 1991, pp. 447-449.
3. S. l Mathew et al., "Hole Confinement and its Impact on Low-Frequency Noise in SiGe pFETs on Sapphire", IEEE IEDM97, Technical Digest, 1997, pp. 815-818.
4. J. A. Chroboczek, G. Ghiabaudo, and T. Skotnicki, "Effects of Channel Positioning on Low Frequency Noise Properties of SilGe MOSFETs", Proceedings of ISRDS97, 1997, pp. 509-512.
5. L. Risch et al., "Fabrication and Electrical Characterizljtion of Si/SiGe p-channel MOSFETs with DElta Doped Boron Layer", Proceedings of ESSDERC96, 1996, pp. 465-468.
6. E. P. Vandamme, L. K. J. Vandamme, C. Claeys, E. Simoen and R. J. Schreutelkamp, "Impact of silicidation on the exess noise behavior of MOS transistors" 'Solid-State Electronics, vol. 38, 1995, pp. 1893-1897.