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Thin Solid Films

Volumn 294, Issue 1-2, 1997, Pages 246-249

Recent advances with SiGe heterojunction bipolar transistors

(2) Gruhle, Andreas a Schüppen, Andreas b

a DAIMLER AG (Germany)

b TEMIC TELEFUNKEN Microelektronic G (Germany)

Author keywords

Germanium; Heterojunctions; Molecular beam epitaxy; Silicon

Indexed keywords

HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS;

HETEROSTRUCTURES;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0031074634 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/S0040-6090(96)09268-1 Document Type: Article

Times cited : (38)

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