Experimental characterization of electron-hole generation in silicon carbide

Journal of Electronic Materials

Volumn 25, Issue 5, 1996, Pages 899-907

  Wang, Y ^a   Cooper Jr , J A ^a   Melloch, M R ^a   Sheppard, S T ^a   Palmour, J W ^b   Lipkin, L A ^b  

^a PURDUE UNIVERSITY   (United States)

^b Arkansas Power Electronics International Inc   (United States)

Author keywords

Activation energy; Capacitors; Electron hole; Generation; Silicon carbide; Thermal

Indexed keywords

EID: 0000587256     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF02666656     Document Type: Article

References (16)

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