Effect of epilayer characteristics and processing conditions on the thermally oxidized SiO2/SiC interface

Journal of Electronic Materials

Volumn 27, Issue 4, 1998, Pages 353-357

  Das, M K ^a   Cooper Jr , J A ^a   Melloch, M R ^a  

^a PURDUE UNIVERSITY   (United States)

Author keywords

Metal oxide semiconductor (MOS); Oxidation; SiO2 SiC

Indexed keywords

EID: 0000120343     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-998-0414-7     Document Type: Article

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