The simulation of epitaxy, sublimation, and annealing processes in a 3D silicon surface layer

Semiconductors

Volumn 35, Issue 9, 2001, Pages 1022-1029

  Zverev, A V ^a   Neizvestnyi I G ^a   Shvarts, N L ^a   Yanovitskaya, Z Sh ^a  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035458075     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1403566     Document Type: Article

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