Thermal stress relaxation in GaAs layer on new thin Si layer over porous Si substrate grown by metalorganic chemical vapor deposition

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 37, Issue 11 SUPPL. B, 1998, Pages

  Hayashi, Yasuhiko ^a   Agata, Yasunori ^a   Soga, Tetsuo ^a   Jimbo, Takashi ^a   Umeno, Masayoshi ^a   Sato, Nobuhiko ^b   Yonehara, Takao ^b  

^a NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

^b CANON INC   (Japan)

Author keywords

Heterostructure GaAs Si; Photoluminescence; Porous Si; Raman scattering; Thermal stress; Thin Si layer; X ray diffraction

Indexed keywords

METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; POROUS SILICON; RAMAN SCATTERING; RESIDUAL STRESSES; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM ARSENIDE; SILICON WAFERS; STRESS RELAXATION; TENSILE STRESS; THERMAL STRESS; X RAY CRYSTALLOGRAPHY;

X RAY DIFFRACTION ROCKING CURVES;

HETEROJUNCTIONS;

EID: 0032203084     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.l1354     Document Type: Article

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