In situ reflection electron microscope observation of two-dimensional nucleation on Si(111) during epitaxial growth

Thin Solid Films

Volumn 281-282, Issue 1-2, 1996, Pages 20-23

  Latyshev, A V ^a   Krasilnikov, A B ^a   Aseev, A L ^a  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

Author keywords

Epitaxial growth; Reflection electron microscopy; Two dimensional nucleation

Indexed keywords

ACTIVATION ENERGY; ATOMS; DISPERSIONS; ELECTRON MICROSCOPY; EPITAXIAL GROWTH; GERMANIUM; MORPHOLOGY; NUCLEATION; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SILICON WAFERS; SURFACES; THERMAL EFFECTS;

ADATOM; REFLECTION ELECTRON MICROSCOPY; STEP FLOW; TEMPERATURE DEPENDENCE; TWO DIMENSIONAL NUCLEATION;

FILM GROWTH;

EID: 0030219443     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/0040-6090(96)08564-1     Document Type: Article

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