Mechanism of silicon epitaxy on porous silicon layers

JETP Letters

Volumn 67, Issue 7, 1998, Pages 539-544

  Novikov, P L ^a   Aleksandrov, L N ^a   Dvurechenskii A V ^a   Zinov'ev, V A ^a  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0012501222     PISSN: 00213640     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.567721     Document Type: Article

References (6)

1. T. Yasumatsu, T. Ito, H. Nishizawa, and A. Hiraki, Appl. Surf. Sci. 48/49, 414 (1991).
2. V. G. Shengurov, V. N. Shabanov, N. V. Gudkova, and B. Ya. Tkach, Mikroélektronika 222, 19 (1993).
3. E. Nossarzewska-Orlowska, D. Lipin'ski, M. Pawlowska et al., Electron Technology 29, 196 (1996).
4. J. D. Weeks and G. H. Gilmer, Adv. Chem. Phys. 40, 157 (1979).
5. D. D. Vvedensky and Sh. Clarke, Surf. Sci. 225, 373 (1990).
6. A. V. Latyshev, A. L. Aseev, A. B. Krasilnikov, and S. I. Stenin, Surf. Sci. 213, 157 (1989).