Structure and optical properties of Si/InAs/Si layers grown by molecular beam epitaxy on Si substrate

Applied Physics Letters

Volumn 76, Issue 19, 2000, Pages 2677-2679

  Zakharov, N D ^a   Werner, P ^a   Gosele U ^a   Heitz, R ^b   Bimberg, D ^b   Ledentsov, N N ^c   Ustinov, V M ^c   Volovik, B V ^c   Alferov, Zh I ^c   Polyakov, N K ^c   Petrov, V N ^c   Egorov, V A ^c   Cirlin, G E ^c  

^a MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

^b TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^c IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000274632     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.126441     Document Type: Article

References (8)

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