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Volumn 306, Issue 2, 1997, Pages 205-213

UHV reflection electron microscopy investigation of the monoatomic steps on the silicon (111) surface at homo- and heteroepitaxial growth

Author keywords

Epitaxy; Reflection electron microscopy; Silicon; Surface phenomena

Indexed keywords

CHEMICAL CLEANING; ELECTRON MICROSCOPY; FILM GROWTH; MORPHOLOGY; NUCLEATION; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SUBSTRATES; SURFACE PHENOMENA; SURFACE STRUCTURE;

EID: 0031220429     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(97)00096-5     Document Type: Article
Times cited : (9)

References (39)
  • 11
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    • S. Stoyanov, Europhys. Lett., 11 (1990) 361; Jpn. J. Appl. Phys., 29 (1990) L659; 30 (1991) 1.
    • (1990) Europhys. Lett. , vol.11 , pp. 361
    • Stoyanov, S.1
  • 12
    • 0025418323 scopus 로고
    • S. Stoyanov, Europhys. Lett., 11 (1990) 361; Jpn. J. Appl. Phys., 29 (1990) L659; 30 (1991) 1.
    • (1990) Jpn. J. Appl. Phys. , vol.29
  • 13
    • 84956249949 scopus 로고
    • S. Stoyanov, Europhys. Lett., 11 (1990) 361; Jpn. J. Appl. Phys., 29 (1990) L659; 30 (1991) 1.
    • (1991) Jpn. J. Appl. Phys. , vol.30 , pp. 1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.