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Volumn 306, Issue 2, 1997, Pages 205-213
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UHV reflection electron microscopy investigation of the monoatomic steps on the silicon (111) surface at homo- and heteroepitaxial growth
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Author keywords
Epitaxy; Reflection electron microscopy; Silicon; Surface phenomena
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Indexed keywords
CHEMICAL CLEANING;
ELECTRON MICROSCOPY;
FILM GROWTH;
MORPHOLOGY;
NUCLEATION;
SEMICONDUCTING GERMANIUM;
SEMICONDUCTING SILICON;
SUBSTRATES;
SURFACE PHENOMENA;
SURFACE STRUCTURE;
ULTRAHIGH VACUUM REFLECTION ELECTRON MICROSCOPY (UHV REM);
EPITAXIAL GROWTH;
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EID: 0031220429
PISSN: 00406090
EISSN: None
Source Type: Journal
DOI: 10.1016/S0040-6090(97)00096-5 Document Type: Article |
Times cited : (9)
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References (39)
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