Initial adsorption process of Si atoms on an Si(111)7 × 7 surface studied by scanning tunneling microscopy

Surface Science

Volumn 445, Issue 1, 2000, Pages 130-137

  Sato, Tomoshige ^a   Kitamura, Shin Ichi ^a   Iwatsuki, Masashi ^a  

^a JEOL LTD   (Japan)

Author keywords

Adatoms; Atom tracking technique; Monte carlo simulations; Scanning tunneling microscopy; Silicon; Single crystal surfaces

Indexed keywords

ABSORPTION; ADSORPTION; DIMERS; MONTE CARLO METHODS; SCANNING TUNNELING MICROSCOPY; SINGLE CRYSTALS; SURFACE STRUCTURE; THERMAL EFFECTS;

ATOM TRACKING TECHNIQUE;

SILICON;

EID: 0033887585     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(99)01059-6     Document Type: Article

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