Transmission electron microscopy investigation of the crystallographic quality of silicon films grown epitaxially on porous silicon

Journal of Crystal Growth

Volumn 212, Issue 1, 2000, Pages 119-127

  Jin, S ^a   Bender, H ^a   Stalmans, L ^b   Bilyalov, R ^b   Poortmans, J ^b   Loo, R ^a   Caymax, M ^a  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; MORPHOLOGY; POROSITY; POROUS SILICON; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

CRYSTALLOGRAPHIC QUALITY;

EPITAXIAL GROWTH;

EID: 0033747288     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(00)00226-8     Document Type: Article

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