Origin of homoepitaxial faulted island growth on the Si(111) surface

Surface Science

Volumn 407, Issue 1-3, 1998, Pages 152-161

  Grube, Holger ^a   Boland, John J ^a  

^a University of North Carolina at Chapel Hill   (United States)

Author keywords

Epitaxy; Halogens; Low index crystal surfaces; Molecule solid reactions; Scanning tunneling microscopy; Silicon; Surface structure and roughness

Indexed keywords

EPITAXIAL GROWTH; NUCLEATION; SCANNING TUNNELING MICROSCOPY; SINGLE CRYSTALS; SUBSTRATES; SURFACE ROUGHNESS;

HOMOEPITAXIAL FAULTED ISLAND GROWTH; LOW INDEX CRYSTAL SURFACES;

SILICON;

EID: 0032094898     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(98)00165-4     Document Type: Article

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