A comparative study of surface reconstruction of wurtzite GaN on (0 0 0 1) sapphire by RF plasma-assisted molecular beam epitaxy

Journal of Crystal Growth

Volumn 231, Issue 1-2, 2001, Pages 8-16

  Lee, Kyeong K ^a   Doolittle, William A ^a   Kim, Tong Ho ^a   Brown, April S ^a   May, Gary S ^a   Stock, Stuart R ^b   Dai, Zu Rong ^b   Wang, Zhong L ^b  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^b Georgia Institute of Technology   (United States)

Author keywords

A1. Surface structure; A3. Molecular beam epitaxy; B1. Gallium compounds; B1. Sapphire

Indexed keywords

GALLIUM NITRIDE; HALL EFFECT; MOLECULAR BEAM EPITAXY; PLASMA APPLICATIONS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SAPPHIRE; SEMICONDUCTING FILMS; SURFACE STRUCTURE; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

SURFACE RECONSTRUCTION;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0035452337     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)01307-0     Document Type: Article

References (26)