Using statistical experimental design to investigate the role of the initial growth conditions on GaN epitaxial films grown by molecular beam epitaxy

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 18, Issue 3, 2000, Pages 1448-1452

  Lee, Kyeong K ^a   Doolittle, William A ^a   Brown, April S ^a   May, Gary S ^a   Stock, Stuart R ^b  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^b Georgia Institute of Technology   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CARRIER MOBILITY; CRYSTAL ORIENTATION; FILM GROWTH; HALL EFFECT; MOLECULAR BEAM EPITAXY; NITROGEN; NUCLEATION; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING GALLIUM COMPOUNDS; STATISTICAL METHODS; SUBSTRATES;

GALLIUM NITRIDE; STATISTICAL EXPERIMENTAL DESIGN;

SEMICONDUCTING FILMS;

EID: 0034187795     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.591401     Document Type: Article

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