A review of hot-carrier degradation mechanisms in MOSFETs

Microelectronics Reliability

Volumn 36, Issue 7-8 SPEC. ISS., 1996, Pages 845-869

  Acovic, Alexandre ^a   La Rosa, Giuseppe ^a   Sun, Yuan Chen ^a  

^a IBM MICROELECTRONICS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; DEGRADATION; ELECTRIC CURRENTS; GATES (TRANSISTOR); MOSFET DEVICES; RELIABILITY; SILICON ON INSULATOR TECHNOLOGY; THERMAL EFFECTS;

GATE CURRENTS; HOT CARRIER DEGRADATION; SCALING EFFECT; STRESS TEMPERATURE;

HOT CARRIERS;

EID: 0030193038     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/0026-2714(96)00022-4     Document Type: Review

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