Breakdown and degradation issues and the choice of a safe load line for power HFET operation

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 2000, Pages 258-263

  Dieci, D ^a   Menozzi, R ^b   Tomasi, T ^a   Sozzi, G ^b   Lanzieri, C ^c   Canali, C ^a  

^a UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

^b UNIVERSITY OF PARMA   (Italy)

^c ALENIA SPAZIO   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; DIFFUSION IN SOLIDS; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; HOT CARRIERS; MATHEMATICAL MODELS; STRESSES;

HETEROJUNCTION FIELD EFFECT TRANSISTORS (HFET);

JUNCTION GATE FIELD EFFECT TRANSISTORS;

EID: 0033733924     PISSN: 00999512     EISSN: None     Source Type: Journal    
DOI: 10.1109/RELPHY.2000.843924     Document Type: Article

References (13)

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