High reliability power GaAs mesfet under RF overdrive condition

IEEE MTT-S International Microwave Symposium Digest

Volumn 1, Issue , 1993, Pages 289-292

  Hasegawa, H ^a   Katsukawa, K ^a   Itoh, T ^a   Noguchi, T ^a   Kaneko, Y ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DEGRADATION; FILMS; RELIABILITY; SEMICONDUCTING GALLIUM ARSENIDE; SILICA;

RADIO FREQUENCY; RF OVERDRIVE CONDITION;

MESFET DEVICES;

EID: 0027260161     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)