Rapid degradation of WSi self-aligned gate GaAs MESFET by hot carrier effect

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 1992, Pages 127-130

  Watanabe, Atsushi ^a   Fujimoto, Kazuhisa ^a   Oda, Mayumi ^a   Nakatsuka, Tadayoshi ^a   Tamura, Akiyoshi ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

DEGRADATION; HOT CARRIERS; PASSIVATION; SEMICONDUCTING GALLIUM ARSENIDE; SILICON NITRIDE; WSI CIRCUITS;

SELF ALIGNED GATE MESFETS;

MOSFET DEVICES;

EID: 0026838525     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/irps.1992.363286     Document Type: Conference Paper

References (6)