Ion implantation and thermal annealing in silicon carbide and gallium nitride

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 178, Issue 1-4, 2001, Pages 204-208

  Jiang, W ^a   Weber, W J ^a   Thevuthasan, S ^a  

^a PACIFIC NORTHWEST NATIONAL LABORATORY   (United States)

Author keywords

6H SiC; GaN; Ion channeling; Ion implantation; Thermal recovery

Indexed keywords

AMORPHIZATION; ANNEALING; DIFFUSION IN SOLIDS; ION IMPLANTATION; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; SINGLE CRYSTALS; THERMAL EFFECTS;

GALLIUM NITRIDE; ION CHANNELING; THERMAL RECOVERY;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0035336876     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(00)00451-1     Document Type: Conference Paper

References (26)