Annealing behavior and lattice site location of Hf implanted GaN

Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Volumn 59, Issue 1-3, 1999, Pages 207-210

  Alves, E ^a   Da Silva, M F ^a   Marques, J G ^b   Soares, J C ^b   Freitag, K ^c  

^a INSTITUTO TECNOLÓGICO E NUCLEAR   (Portugal)

^b UNIVERSITY OF LISBON   (Portugal)

^c UNIVERSITY OF BONN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL LATTICES; HAFNIUM; ION IMPLANTATION; POINT DEFECTS; SEMICONDUCTING GALLIUM COMPOUNDS; TEMPERATURE;

ANNEALING BEHAVIOR; DEFECT RECOVERY; HYPERFINE INTERACTION MEASUREMENTS; LATTICE SITE LOCATION; SINGLE CRYSTALLINE EPILAYERS; SUBSTITUTIONAL SITES;

SINGLE CRYSTALS;

EID: 0033528894     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(98)00392-4     Document Type: Article

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