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Materials Research Society Symposium-Proceedings

Volumn 622, Issue , 2000, Pages T791-T796

Surface disordering and nitrogen loss in GaN under ion bombardment

(9) Kucheyev, S O a Williams, J S a Jagadish, C a Zou, J b Toth, M c Phillips, M R c Tan, H H a Li, G d Pearton, S J e

a AUSTRALIAN NATIONAL UNIVERSITY (Australia)

b UNIVERSITY OF SYDNEY (Australia)

c UNIVERSITY OF TECHNOLOGY SYDNEY (Australia)

d Ledex Corporation (Taiwan)

e University of Florida (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHIZATION; ANNEALING; CATHODOLUMINESCENCE; ION BOMBARDMENT; NITROGEN; RUTHERFORD BACKSCATTERING SPECTROSCOPY; TRANSMISSION ELECTRON MICROSCOPY;

SURFACE DISORDERING;

GALLIUM NITRIDE;

EID: 0034431461 PISSN: 02729172 EISSN: None Source Type: Journal
DOI: 10.1557/proc-622-t7.9.1 Document Type: Article

Times cited : (9)

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