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Volumn 141, Issue 1-4, 1998, Pages 118-122

Computer simulation of a 10 keV Si displacement cascade in SiC

Author keywords

Damage cascade; Molecular dynamics; Radiation effects; SiC; Tersoff potential

Indexed keywords

COMPUTER SIMULATION; CRYSTAL LATTICES; MOLECULAR DYNAMICS; SILICON CARBIDE;

EID: 0032064866     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(98)00084-6     Document Type: Article
Times cited : (101)

References (19)
  • 2
  • 10
    • 4243941082 scopus 로고
    • J. Tersoff, Phys. Rev. Lett 64 (1990) 1757; Phys. Rev. B 49 (1994) 16349.
    • (1990) Phys. Rev. Lett , vol.64 , pp. 1757
    • Tersoff, J.1
  • 11
    • 4243535075 scopus 로고
    • J. Tersoff, Phys. Rev. Lett 64 (1990) 1757; Phys. Rev. B 49 (1994) 16349.
    • (1994) Phys. Rev. B , vol.49 , pp. 16349


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.