Effect of implantation-parameters on the structural properties of Mg-ion implanted GaN

Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Volumn 59, Issue 1-3, 1999, Pages 191-194

  Wenzel, A ^a   Liu, C ^a   Rauschenbach, B ^a  

^a UNIVERSITY OF AUGSBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; CURRENT DENSITY; ION IMPLANTATION; MAGNESIUM; POSITIVE IONS; RAPID THERMAL ANNEALING; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SUBSTRATES; TEMPERATURE;

CHANNELING; DAMAGE GENERATION; IMPLANTATION PARAMETERS; STRUCTURAL PROPERTIES;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0033528957     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(98)00409-7     Document Type: Article

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