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Volumn 166, Issue , 2000, Pages 410-414
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Defect annealing kinetics in irradiated 6H-SiC
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Author keywords
[No Author keywords available]
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Indexed keywords
ACTIVATION ENERGY;
ANNEALING;
COMPOSITION EFFECTS;
CRYSTAL DEFECTS;
CRYSTAL LATTICES;
HELIUM;
HYDROGENATION;
ION IMPLANTATION;
ISOTHERMS;
RADIATION DAMAGE;
REACTION KINETICS;
THERMAL EFFECTS;
ISOCHRONAL ANNEALING;
ISOTHERMAL ANNEALING;
SILICON CARBIDE;
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EID: 0033738037
PISSN: 0168583X
EISSN: None
Source Type: Journal
DOI: 10.1016/S0168-583X(99)00868-X Document Type: Article |
Times cited : (37)
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References (12)
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