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Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Volumn 71, Issue 1-3, 2000, Pages 100-103

Radiation induced defects in MOVPE grown n-GaN

(6) Goodman, S A a Auret, F D a Koschnick, F K b Spaeth, J M b Beaumont, B c Gibart, P c

a UNIVERSITY OF PRETORIA (South Africa)

b UNIVERSITY OF PADERBORN (Germany)

c CRHEA CNRS (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; ELECTRON IRRADIATION; HELIUM; HYDROGEN; ION BOMBARDMENT; ION IMPLANTATION; METALLORGANIC VAPOR PHASE EPITAXY; PROTON IRRADIATION; RADIATION DAMAGE; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR GROWTH;

GALLIUM NITRIDE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0033875314 PISSN: 09215107 EISSN: None Source Type: Journal
DOI: 10.1016/S0921-5107(99)00357-8 Document Type: Article

Times cited : (66)

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