Electrical properties of crystalline YSZ films on silicon as alternative gate dielectrics

Semiconductor Science and Technology

Volumn 16, Issue 3, 2001, Pages

  Wang, S J ^a   Ong, C K ^a   Xu, S Y ^a   Chen, P ^a   Tjiu, W C ^b   Huan, A C H ^b   Yoo, W J ^a   Lim, J S ^a   Feng, W ^a   Choi, W K ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; CRYSTALLINE MATERIALS; CURRENT DENSITY; DEPOSITION; ELECTRIC CONDUCTIVITY; HYSTERESIS; INTERFACES (MATERIALS); LEAKAGE CURRENTS; SILICA; SILICON WAFERS; ULTRATHIN FILMS; ZIRCONIA;

YTTRIA-STABILIZED ZIRCONIA OXIDE FILMS;

DIELECTRIC FILMS;

EID: 0035281034     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/16/3/101     Document Type: Article

References (18)