1.3-μm InAsP modulation-doped MQW lasers

IEEE Journal of Quantum Electronics

Volumn 36, Issue 6, 2000, Pages 728-735

  Shimizu, Hitoshi ^a,b,c   Kumada, Kouji ^a,b   Yamanaka, Nobumitsu ^a,b,c   Iwai, Norihiro ^a,b,c   Mukaihara, Toshikazu ^a,c,d,e   Kasukawa, Akihiko ^f  

^a FURUKAWA ELECTRIC CO LTD   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

^c JAPAN SOCIETY OF APPLIED PHYSICS   (Japan)

^d TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^e Institute of Electronics   (Japan)

^f IEEE

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM INDIUM ARSENIC PHOSPHIDE; GAS SOURCE MOLECULAR BEAM EPITAXY; INDIUM ARSENIC PHOSPHIDE; PARALLEL OPTICAL INTERCONNECTION SYSTEM; SEPARATE CONFINEMENT HETEROSTRUCTURE; THRESHOLD CURRENT DENSITY;

CURRENT DENSITY; ELECTRIC POWER SUPPLIES TO APPARATUS; EPITAXIAL GROWTH; HETEROJUNCTIONS; LASER APPLICATIONS; MOLECULAR BEAM EPITAXY; OPTICAL INTERCONNECTS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING;

QUANTUM WELL LASERS;

EID: 0033685771     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/3.845730     Document Type: Article

References (23)

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