Application of atomic scale STEM techniques to the study of interfaces and defects in materials

Journal of Electron Microscopy

Volumn 50, Issue 3, 2001, Pages 205-218

  Browning, D ^a   Arslan, I ^a   Ito, Y ^a   James, M ^a,c   Klie, F ^a   Moeck, P ^a   Topuria, T ^a   Xin, Y ^a,b,d  

^a UNIVERSITY OF ILLINOIS AT CHICAGO   (United States)

^b OAK RIDGE NATIONAL LABORATORY   (United States)

^c KLA TENCOR CORPORATION   (United States)

^d FLORIDA STATE UNIVERSITY   (United States)

Author keywords

Defects; EELS; Interfaces; STEM; Z contrast images

Indexed keywords

ARTICLE;

ATOMS; CHEMICAL BONDS; DEFECTS; ELECTRONIC STRUCTURE; III-V SEMICONDUCTORS; PEROVSKITE; SEMICONDUCTOR QUANTUM DOTS; TRANSMISSION ELECTRON MICROSCOPY;

ANALYSIS TECHNIQUES; ATOMIC SCALE; INCOHERENT IMAGING; MATERIAL DEFECT; MATERIAL INTERFACES; RESOLUTION LIMITS; SCANNING TRANSMISSION ELECTRON MICROSCOPES; STANDARD CONDITIONS; STRUCTURE-PROPERTIES RELATIONSHIPS; Z-CONTRAST IMAGES;

INTERFACES (MATERIALS);

EID: 0034932105     PISSN: 00220744     EISSN: None     Source Type: Journal    
DOI: 10.1093/jmicro/50.3.205     Document Type: Article

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