Monte Carlo simulator for the design optimization of low-noise HEMTs

IEEE Transactions on Electron Devices

Volumn 47, Issue 10, 2000, Pages 1950-1956

  Mateos, Javier ^a,b   Gonzalez, Tomâs ^a   Pardo, Daniel ^a   Hoël, Virginie ^a   Cappy, Alain ^a  

^a UNIVERSITY OF SALAMANCA   (Spain)

^b INSTITUT D ELECTRONIQUE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; DIELECTRIC MATERIALS; ELECTRIC RESISTANCE; EQUIVALENT CIRCUITS; GATES (TRANSISTOR); MONTE CARLO METHODS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; SPURIOUS SIGNAL NOISE;

ALUMINUM INDIUM ARSENIDE; GALLIUM INDIUM ARSENIDE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0034297790     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.870579     Document Type: Article

References (24)

1. J. Mateos et al., "Noise analysis of 0.1 /j,m gate MESFET's and HEMTs," Solid-State Electron., vol. 42, p. 79, 1998.
2. H. Wang et ai, "Fully passivated W-band InAlAs/InGaAs/InP monolithic low-noise amplifiers," in IEE Proc. Microwave and Antennas Propagation, vol. 143, 1996, p. 361.
3. S. Selberherr, Analysis and Simulation of Semiconductor Devices. Berlin, Germany: Springer-Verlag, 1984.
4. C. M. Snowden, Introduction to Semiconductor Device Modeling. Singapore: World Scientific, 1986.
5. C. Jacoboni and P. Eugli, The Monte Carlo Method for Semiconductor Device Simulation. Berlin, Germany: Springer-Verlag, 1989.
6. J. Mateos et al., "Improved Monte Carlo algorithm for the simulation of e-doped AlInAs/GalnAs HEMTs," IEEE Trans. Electron Devices, vol. 47, p. 250, Jan. 2000.
7. J. Mateos et al, "Numerical and experimental analysis of static characteristics and noise in ungated recessed MESFET structures," Solid-State Electron., vol. 39, p. 1629, 1996.
8. _, "Noise and transit time in ungated FET structures," IEEE Trans. Electron Devices, vol. 44, p. 2128, 1997.
9. J. Mateos et al., "Effect of the T-gate on the performance of recessed HEMT's. A Monte Carlo analysis," Semiconduct. Sci. Technol, vol. 14, p. 864, 1999.
10. S. Babiker, A. Asenov, N. Cameron, and S. P. Beaumont, "Simple approach to include external resistances in the Monte Carlo simulation of MESFET's and HEMTs," IEEE Trans. Electron Devices, vol. 43, p. 2032, 1996.
11. S. Babiker et al., "Complete Monte Carlo RF analysis of "real" short channel compound FETs," IEEE Trans. Electron Devices, vol. 45, p. 1644, 1998.
12. S. D. Greaves and R. T. Unwin, "Accurate noise characterization of short gate length GaAs MESFET's and HEMT's for use in low-noise optical receivers," Microwave Opt. Technol. Lett., vol. 6, p. 60, 1993.
13. G. W. Wang, Y. K. Chen, W. J. Schaff, and E. F. Eastman, "A 0. l-//m gâte Alo.ôIno.ôAs/Gao.ôIno.ôAs MODFET fabricated on GaAs substrates," IEEE Trans. Electron Devices, vol. 35, p. 818, 1988.
14. S. Bollaert et al., "Metamorphic Ino-Alo.eAs/Ino-Gao.eAs HEMT's on GaAs Substrate, " IEEE Electron Device Lett., vol. 20, p. 123, 1999.
15. T. Suemitsu étal., "30-nm-gate InP-based lattice-matched high electron mobility transistors with 350 GHz cutoff frequency," Jpn. J. Appl. Phys., vol. 38, p. E154, 1999.
16. K. Onodera et al., "Extremely low-noise performance of GaAs MESFET's with wide-head T-shaped gate," IEEE Trans. Electron Devices, vol. 46, p. 310, Feb. 1999.
17. B. H. Klepser et al., "Analytical bias dependent noise model for InP HEMTs," IEEE Trans. Electron Devices, vol. 42, p. 1882, 1995.
18. G. Dambrine, A. Cappy, F. Heliodore, and E. Playez, "A new method for determining the FET small-signal equivalent circuit," IEEE Trans. Microwave Theory Tech., vol. 32, p. 1151, 1988.
19. R. Singh and C. Snowden, "Small-signal characterization of microwave and millimeter-wave HEMT's based on a physical model," IEEE Trans. Microwave Theory Tech., vol. 44, p. 114, 1996.
20. T. Gonzalez and D. Pardo, "Monte Carlo determination of the intrinsic small-signal equivalent circuit of MESFETs," IEEE Trans. Electron Devices, vol. 42, p. 605, 1995.
21. R. A. Pucel, H. A. Haus H, and H. A. Statz, "Signal and noise properties of gallium arsenide field effect transistors," Adv. Electron. Electron Phys., vol. 38, p. 195, 1974.
22. H. Rothe and W. Dahlke, "Theory of noisy fourpoles," Proc. IRE, vol. 44, p. 811, 1956.
23. A. Cappy, "Noise modeling and measurement techniques," IEEE Trans. Microwave Theory Tech., vol. 36, p. 1, 1988.
24. G. Dambrine, J. M. Belquin, F. Danneville, and A. Cappy, "A new extrinsic equivalent circuit of HEMT's including noise for millimeter-wave circuit design," IEEE Trans. Microwave Theory Tech., vol.46, p. 1231, 1998.