Analytical Bias Dependent Noise Model for InP HEMT's

IEEE Transactions on Electron Devices

Volumn 42, Issue 11, 1995, Pages 1882-1889

  Klepser, Bernd Ulrich H ^a   Bergamaschi, Crispino ^a   Schefer, Matthias ^a   Diskus, Christian G ^a   Patrick, William ^a   Bachtold, Werner ^a  

^a ETH ZURICH   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CONTROL MODELS; ELEMENTARY FUNCTIONS; LOW NOISE AMPLIFIERS; MODELLING SCALING EFFECTS; SATURATION VELOCITY MODELS; TWO DIMENSIONAL ELECTRON GAS; TWO PIECE LINEAR APPROXIMATION;

APPROXIMATION THEORY; CALCULATIONS; COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENTS; MATHEMATICAL MODELS; SEMICONDUCTING INDIUM PHOSPHIDE; SPURIOUS SIGNAL NOISE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0029403369     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.469392     Document Type: Article

References (17)

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