Accurate noise characterization of short gate length GaAs mesfets and hemts for use in low‐noise optical receivers

Microwave and Optical Technology Letters

Volumn 6, Issue 1, 1993, Pages 60-65

  Greaves, S D ^a   Unwin, R T ^a  

^a UNIVERSITY OF HUDDERSFIELD   (United Kingdom)

Author keywords

device modeling; low noise optical receiver design; Noise characterization

Indexed keywords

GATES (TRANSISTOR); HIGH ELECTRON MOBILITY TRANSISTORS; MATHEMATICAL MODELS; MESFET DEVICES; OPTICAL PROPERTIES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MODELS; SIGNAL RECEIVERS; SPURIOUS SIGNAL NOISE;

LOW NOISE OPTICAL RECEIVER DESIGN; NOISE CHARACTERIZATION; NOISE PARAMETERS;

SEMICONDUCTOR DEVICES;

EID: 0027222229     PISSN: 08952477     EISSN: 10982760     Source Type: Journal    
DOI: 10.1002/mop.4650060116     Document Type: Article

References (12)

1. Noise Characteristics of GaAs FET's
2. Gate Noise in FET's at Moderately High Frequencies
3. Noise Behaviour of GaAs FET's with Short Gate Lengths
4. Noise Modelling in Sub‐Micrometer Gate FET's
5. Tuned Optical Receivers for Microwave Subcarrier Multiplexed Lightwave Systems
6. Low Noise 8 GHz PIN/FET Optical Receiver
7. Determining Intrinsic Noise Parameters of 0.25 μm Gate Pseudomorphic HEMT
8. Theory of Noisy Fourpoles
9. Modeling of Noise Parameters of MESFET's and MODFET's and Their Frequency and Temperature Dependence
10. High‐Frequency FET Noise Performance: A New Approach