Noise and transit time in ungated FET structures

IEEE Transactions on Electron Devices

Volumn 44, Issue 12, 1997, Pages 2128-2135

  Mateos, Javier ^a   González, Tomás ^a   Pardo, Daniel ^b   Tadyszak, Patrick ^b   Danneville, François ^a   Cappy, Alain ^a  

^a UNIVERSITY OF SALAMANCA   (Spain)

^b INSTITUT D ELECTRONIQUE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRON TRANSITIONS; MESFET DEVICES; MONTE CARLO METHODS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES;

NOISE TEMPERATURE; TRANSIT TIME DISTRIBUTIONS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0031335051     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.644625     Document Type: Article

References (30)

1. R. J. Nelson Long lifetime photoconductivity effect in n-type GaAlAs Appl. Phys. Lett. vol. 31 p. 351 1977.
2. 1-xAs Phys. Rev. B p. 1015 1979.
3. A. Kastalsky and R. Kiehl On the low temperature degradation of AlGaAs/GaAs modulation-doped field effect transistors IEEE Trans. Electron Devices vol. ED33 p. 414 1986.
4. C. Jacoboni and P. Lugli The Monte-Carlo Method for Semiconductor Device Simulation. Vienna Austria: Springer-Verlag 1989.
5. C. Jacoboni and L. Reggiani The Monte-Carlo method for the solution of charge transport in semiconductors with application to covalent materials Rev. Mod. Phys. vol. 55 p. 645 1983.
6. M. Tomizawa A. Yoshii and K. Yokoyama Modeling for an AlGaAs/GaAs heterostructure device using Monte-Carlo simulation IEEE Electron Device Lett. vol. EDL6 p. 332 1985.
7. U. Ravaioli and D. Ferry MODFET ensemble Monte-Carlo model including the quasi-two-dimensional electron gas IEEE Trans. Electron Devices vol. ED33 p. 677 1986.
8. D. H. Park Y. Wang and K. F. Brennan Ensemble Monte-Carlo simulation of a 0.35-μm pseudomorphic HEMT IEEE Electron Device Lett. vol. 10 p. 107 1989.
9. D. J. Widiger K. Hess and J. J. Coleman Two-dimensional numerical analysis of the high electron mobility transistor IEEE Electron Device Lett. vol. EDL5 p. 266 1984.
10. D. J. Widiger I. C. Kizilyalli K. Hess and J. J. Coleman Two-dimensional transient simulation of an idealized high electron mobility transistor IEEE Trans. Electron Devices vol. ED32 p. 1092 1985.
11. 1-xAs/GaAs single-well heterostructures Phys. Rev. B. vol. 33 p. 5595 1986.
12. K. F. Brennan and D. H. Park Theoretical comparison of electron real-space transfer in classical and quantum two-dimensional heterostructure systems J. Appl. Phys. vol. 65 p. 1156 1989.
13. J. Mateos T. González D. Pardo P. Tadyszak F. Danneville and A. Cappy Numerical and experimental analysis of static characteristics and noise in ungated recessed MESFET structures Solid-State Electron. vol. 39 p. 1629 1996.
14. I. C. Kizilyalli K. Hess J. L. Larsson and D. J. Widiger Scaling properties of high electron mobility transistors IEEE Trans. Electron Devices vol. ED33 p. 1427 1986.
15. V. Mitin V. Gruzinskis E. Starikov and P. Shiktorov Submillimeter wave generation and noise in InP diodes J. Appl. Phys. vol. 75 p. 935 1994.
16. F. Heliodore M. Eefebvre G. Salmer and O. E. El-Sayed Two-dimensional Simulation of submicrometer GaAs MESFET's: Surface effects and optimization of recessed gate structures IEEE Trans. Electron Devices vol. 35 p. 824 1988.
17. M. V. Fischetti and S. E. Eaux Monte-Carlo analysis of electron transport in small semiconductor devices including band-structure and space-charge effects Phys. Rev. B vol. 38 p. 9721 1988.
18. T. González and D. Pardo Physical models of ohmic contact for Monte-Carlo device simulation Solid-State Electron. vol. 39 p. 555 1996.
19. J. Mateos T. González and D. Pardo Spatial extent of the correlation between local diffusion noise sources in GaAs J. Appl. Phys. vol. 77 p. 1564 1995.
20. T. González J. E. Velázquez P. M. Gutierrez and D. Pardo Five valley model for the study of electron transport properties at very high electric fields in GaAs Semicond. Sci. Technol. vol. 6 p. 862 1991.
21. 1-xAs alloys J. Appl. Phys. vol. 75 p. 4779 1994.
22. 1-xAs composition IEEE Trans. Electron Devices vol. 38 p. 197 1991.
23. T. Wang and K. Hess Calculation of the electron velocity distribution in high electron mobility transistors using an ensemble Monte-Carlo method J. Appl. Phys. vol. 57 p. 5336 1985.
24. R. Sakamoto K. Akai and M. Inoue Real-space transfer and hot-electron transport properties in III-V semiconductor heterostructures IEEE Trans. Electron Devices vol. 36 p. 2344 1989.
25. K. F. Brennan D. H. Park K. Hess and M. A. Littlejohn Theory of the velocity-field relation in AlGaAs J. Appl. Phys. vol. 63 p. 5004 1988.
26. M. O. Watanabe J. Yoshida M. Mashita T. Nakanisi and A. Hojo Band discontinuity for GaAs/AlGaAs heterojunction determined by C-V profiling technique J. Appl. Phys. vol. 57 p. 5340 1985.
27. G. U. Jensen B. Lund T. A. Fjeldly and M. Shur Monte-Carlo simulation of short-channel heterostructure field-effect transistors IEEE Trans. Electron Devices vol. 38 p. 840 1991.
28. G. Dambrine H. Happy F. Danneville and A. Cappy A new method for on wafer noise measurements IEEE Trans. Microwave Theory Tech. vol. 41 p. 375 1993.
29. E. Varani E. Reggiani T. Kuhn T. González and D. Pardo Microscopic simulation of electronic noise in semiconductor materials and devices IEEE Trans. Electron Devices vol. 41 p. 1916 1994.
30. Y. Awano M. Kosugi K. Kosemura T. Mimura and M. Abe Short-channel effects in subquarter-micrometer-gate HEMT's: Simulation and experiment IEEE Trans. Electron Devices vol. 36 p. 2260 1989.