A 0.1-μm Gate Al0.5In0.5As/Ga0.5In0.5As MODFET Fabricated on GaAs Substrates

IEEE Transactions on Electron Devices

Volumn 35, Issue 7, 1988, Pages 818-823

  Wang, Guan Wu ^a   Chen, Young Kai ^a   Schaff, William J ^a   Eastman, Lester F ^a  

^a Department of Obstetrics Gynecology   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING GALLIUM ARSENIDE - GROWTH; SEMICONDUCTING INDIUM COMPOUNDS; SUBSTRATES;

LATTICE-MATCHED INDIUM PHOSPHIDE SUBSTRATES; LATTICE-MISMATCHED GALLIUM ARSENIDE SUBSTRATES; MODULATION-DOPED FET (MODFET); PARASITIC SUBSTRATE CONDUCTION; THREADING DISLOCATIONS;

TRANSISTORS, FIELD EFFECT;

EID: 0024053895     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.3331     Document Type: Article

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