Fully passivated W-band InAIAs/lnGaAs/lnP monolithic low noise amplifiers

IEE Proceedings: Microwaves, Antennas and Propagation

Volumn 143, Issue 5, 1996, Pages 361-366

  Wang, H ^a   Ng, G I ^a   Lai, R ^a   Hwang, Y ^a   Lo, D C W ^a   Dia, R ^a   Freudenthal, A ^a   Block, T ^a  

^a NORTHROP GRUMMAN CORPORATION   (United States)

Author keywords

11emt technology; Low noise aniplifis

Indexed keywords

HIGH ELECTRON MOBILITY TRANSISTORS; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; PASSIVATION; PRINTED CIRCUIT TESTING; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SIGNAL NOISE MEASUREMENT;

MONOLITHIC LOW NOISE AMPLIFIERS;

BROADBAND AMPLIFIERS;

EID: 0030261939     PISSN: 13502417     EISSN: None     Source Type: Journal    
DOI: 10.1049/ip-map:19960506     Document Type: Article

References (18)

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