Numerical and experimental analysis of the static characteristics and noise in ungated recessed MESFET structures

Solid-State Electronics

Volumn 39, Issue 11, 1996, Pages 1629-1636

  Mateos, J ^a   Gonzalez T ^a   Pardo, D ^a   Tadyszak, P ^b   Danneville, F ^b   Cappy, A ^b  

^a UNIVERSITY OF SALAMANCA   (Spain)

^b INSTITUT D ELECTRONIQUE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENT MEASUREMENT; ELECTRIC FIELD EFFECTS; ELECTRONS; HOT CARRIERS; MONTE CARLO METHODS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES; SPURIOUS SIGNAL NOISE; VOLTAGE MEASUREMENT;

UNGATED RECESSED MESFET STRUCTURES;

MESFET DEVICES;

EID: 0030287489     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(96)00083-4     Document Type: Article

References (23)

1. S. Selberherr, Analysis and Simulation of Semiconductor Devices. Springer, Vienna (1984).
2. C. M. Snowden, Introduction to Semiconductor Device Modeling. World Scientific, Singapore (1986).
3. C. Jacoboni and P. Lugli, The Monte Carlo Method for Semiconductor Device Simulation. Springer, Vienna (1989).
4. L. Varani, L. Reggiani, T. Kuhn, T. Gonzalez and D. Pardo, IEEE Trans. Electron. Devices 4, 1916 (1994).
5. T. Gonzalez, D. Pardo, L. Varani and L. Reggiani, Appl. Phys. Lett. 63, 3040 (1993).
6. C. Moglestue, IEEE Trans. Electron. Devices 32, 2092 (1985).
7. T. Gonzalez, D. Pardo, L. Varani and L. Reggiani, IEEE Trans. Electron. Devices 42, 1991 (1995).
8. J. G. Adams and T. W. Tang, IEEE Electron Devices Lett. 13, 378 (1992).
9. J. G. Adams, T. W. Tang and L. E. Kay, IEEE Trans. Electron. Devices 41, 575 (1994).
10. C. Jacoboni and L. Reggiani, Rev. Mod. Phys. 55, 645 (1983).
11. M. Shur, GaAs Devices and Circuits, p. 407. Plenum, New York (1987).
12. P. Kireev, La Physique des Semiconducteurs. MIR, Moscow (1975).
13. G. Dambrine, H. Happy, F. Danneville and A. Cappy, IEEE Trans. Microw. Theory Technol. 41, 375 (1993).
14. M. V. Fischetti and S. E. Laux, Phys. Rev. B 38, 9721 (1988).
15. T. Gonzalez and D. Pardo, Solid-St. Electron. 39, 555 (1996).
16. J. Mateos, T. Gonzalez and D. Pardo, J. Appl. Phys. 77, 1564 (1995).
17. T. Gonzalez, J. E. Velazquez, P. M. Gutierrez and D. Pardo, Semicond. Sci. Technol. 6, 862 (1991).
18. V. Mitin, V. Gruzinskis, E. Starikov and P. Shiktorov, J. Appl. Phys. 75, 935 (1994).
19. V. Gruzinskis, S. Kersulis and A. Reklaitis, Semicond. Sci. Technol. 6, 602 (1991).
20. S. G. Pavison and J. D. Devine, Solid-St. Phys. 25, 137 (1970).
21. C. Moglestue, Monte Carlo Simulation of Semiconductor Devices, p. 185. Chapman and Hall, London (1993).
22. C. J. Stanton and J. W. Wilkins, Physica B 134, 255 (1985).
23. T. Kuhn, L. Reggiani and L. Varani, Superlattices Microstruct. 11, 205 (1992).