Small-signal characterization of microwave and millimeter-wave hemt's based on a physical model

IEEE Transactions on Microwave Theory and Techniques

Volumn 44, Issue 1, 1996, Pages 114-121

  Singh, Ranjit ^a   Snowden, Christopher M ^a  

^a UNIVERSITY OF LEEDS   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER AIDED DESIGN; COMPUTER SIMULATION; ELECTRIC BREAKDOWN; EQUIVALENT CIRCUITS; MICROWAVE DEVICES; MILLIMETER WAVE DEVICES; PERFORMANCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MODELS; TIME DOMAIN ANALYSIS;

CARRIER ENERGY DISTRIBUTION MODEL; MULTISIGNAL EXCITATION; SMALL SIGNAL CHARACTERIZATION; TWO PORT PARAMETERS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0029733141     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/22.481393     Document Type: Article

References (13)

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10. "A self-consistent charge-control model for HEMT's incorporating deep level effects," in Proc. Int. Workshop on Computational Electronics, Leeds, 1993, pp. 60-64.
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