Metamorphic In0.4Al0.6As/In0.4Ga0.6As HEMT's on GaAs Substrate

IEEE Electron Device Letters

Volumn 20, Issue 3, 1999, Pages 123-125

  Bollaert, S ^a   Cordier, Y ^a   Hoel, V ^a   Zaknoune, M ^a   Happy, H ^a   Lepilliet, S ^a   Cappy, A ^a  

^a INSTITUT D ELECTRONIQUE   (France)

Author keywords

GaAs; HEMT's; InAlAs InGaAs; Metamorphic

Indexed keywords

ELECTRIC CURRENTS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SUBSTRATES; TRANSCONDUCTANCE;

METAMORPHIC SEMICONDUCTORS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0033099221     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.748908     Document Type: Article

References (5)

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